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    DSAZIHA100025031.pdf by American Microsemiconductor

    • 2SD1666 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V
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