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    DSAZIHA100024240.pdf by American Microsemiconductor

    • 2N3477 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150# I(CBO) Max. (A)20m÷ @
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