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    DSAZIHA100024060.pdf by American Microsemiconductor

    • 2N1136 Transistors Ge PNP Power BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)100õ I(CBO) Max. (A)5.0m @V(CB
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