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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs (C-Band) Features â¢ High power ' PidB = 39 dBm at 4.9 GHz to 5.10 GHz â¢ High gain - G-|dB = 9.5 dB at 4.9
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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