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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET JS 8834-A S Power GaAs FETs (Chip Form) Features â¢ Medium power - P1dB = 21 dBm at f = 8 GHz â¢ High gain - GidB = Â® at f = 8 GHz â¢ Suitable for C-
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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