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TOSHIBA
MICROWAVE POWER GaAs FET
JS8892-AS
Power GaAs FETs (Chip Form)
Features
⢠High power
- P 1dB = 2 1 .0 dBm at f = 2 3 GHz
⢠High gain
- G1dB = 6 .5 dB at f = 23 GHz
⢠Suitabl