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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET JS8893-AS Power GaAs FETs (Chip Form) Features â¢ High power - P1dB = 2 4 .0 d B m a tf = 2 3 G H z â¢ High gain - G 1dB = 6.0 dB at f = 23 GHz â¢ Su
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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