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DSA00122100.pdf
by International Rectifier
Partial File Text
PD - 94419 IRF7910 HEXFET® Power MOSFET VDSS S1 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current G1 S2 G2 RDS(on) max
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Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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EIA-541
F7101
IRF7101
IRF7910
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