DSA00486954.pdf by Cree

Partial File Text UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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