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    DSAZIHA100020306.pdf by American Microsemiconductor

    • ECG2355 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO)
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