The 2N7002BKM is a low-threshold voltage N-channel MOSFET, and its maximum operating frequency is not explicitly stated in the datasheet. However, based on its characteristics, it is suitable for low-frequency applications up to 100 kHz.
To ensure the 2N7002BKM is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be within the recommended operating range. Additionally, the gate current should be sufficient to charge the gate capacitance quickly.
The thermal resistance of the 2N7002BKM is not explicitly stated in the datasheet. However, based on the package type (SOT23) and the device's power handling capabilities, the thermal resistance is estimated to be around 200-250°C/W.
While the 2N7002BKM can handle high currents, it is not recommended for high-current switching applications due to its limited power handling capabilities and thermal limitations. It is more suitable for low-power switching applications.
To protect the 2N7002BKM from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure the workspace is ESD-safe. Additionally, use ESD protection devices, such as TVS diodes, in the circuit design.
2N7002BKM,315 datasheet
by NXP Semiconductors
