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    Part Img 2SCR533PHZGT100 datasheet by ROHM Semiconductor

    • NPN MIDDLE POWER TRANSISTOR (50V
    • Original
    • Yes
    • Active
    • EAR99
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    2SCR533PHZGT100 datasheet preview

    2SCR533PHZGT100 Frequently Asked Questions (FAQs)

    • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
    • Ensure that the device is operated within the recommended temperature range (up to 150°C). Use a heat sink or thermal interface material to reduce thermal resistance. Also, consider derating the device's power dissipation at high temperatures.
    • ROHM recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure fast switching times and low losses. The gate drive circuit should be designed to provide a low impedance path to the gate terminal.
    • Use a voltage clamp or TVS diode to protect the device from overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
    • Store the devices in their original packaging or in a dry, ESD-protected environment. Handle the devices by the body or the pins, avoiding touching the die or the leads. Use an ESD wrist strap or mat when handling the devices.
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