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Partial File Text ï»¿CET451AN March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES â¢ 30V, 7.2A, Rds(on)=35itiq @Vgs=10V. rds(on)=50mn @Vgs=4.5V. â¢ High dense cell design for low Rds<on). â
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