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Partial File Text ï»¿March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES â¢ 30V, 7.3A, Rds(on)=28ITIQ @Vgs=1 0V. RDS(ON)=42mQ @VGS=4.5V. â¢ Super high dense cell design for extremely low Rds(o
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