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    DSAZIHA100019148.pdf by American Microsemiconductor

    • 2N4355 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50nØ
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