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    DSAZIHA100019126.pdf by American Microsemiconductor

    • 2N3965 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)175õ I(CBO) Max. (A).01uÃ
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