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    DSAZIHA100019104.pdf by American Microsemiconductor

    • 2N3855 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)18 V(BR)CBO (V)18 I(C) Max. (A)100m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n
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