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    DSAZIHA100017575.pdf by American Microsemiconductor

    • 2N127 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V) V(BR)CBO (V)10 I(C) Max. (A)8.0m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)2.0uØ @V
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    DSAZIHA100017575.pdf preview

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