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    DSAZIHA100017220.pdf by American Microsemiconductor

    • 2G1027 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)40ã V(BR)CBO (V)70 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)30u
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