DSAZIHA1000311450.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM3742-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz BROAD BAND
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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