DSAQ00274591.pdf by California Eastern Laboratories

Partial File Text HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES · Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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HS350 m04 marking marking v80 NE3509 ne3509m04 NE3509M04-A transistor marking v80 ghz