DSA00275925.pdf by Hitachi

Partial File Text 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features · Low noise figure. NF = 2.0 dB typ. at f = 900 MHz · Capable of low voltage opera
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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