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DSA00272495.pdf
by Hitachi Semiconductor
Partial File Text
4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switch
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ing Features · Low on-resistance N-channel: RDS(on) 0.17 , VGS = 10 V, I D = 2.5 A P-channel: RDS(on)
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Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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