This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
SIEMENS
SIPMOS® Kleinsignal-Bauelemente MOS-Transistoren im Bereich 50 V ... 800 V und 40 mA ... 3800 mA. IGBT: 1200 V; 2500 mA 1 Allgemeines
Technische Angaben Technical Information
SIPMOS® Sm