DSA00129090.pdf by Microsemi

Partial File Text N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. · Collector/Gate
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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defibrillator MSAGA11F120D MSAGA11F120DL

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