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    • Si-Fotodetektoren 2.4 im hermetisch dichten Metallgehäuse Type Silicon Photodetectors 2.4 /peg ()*--950 nm, Ee= 0 .5 m W /cm 2, V tt= 5 V ) deg. mm2 0 12 mA 0.5 ...2 .5 0 .5 ... 1.0 0 8 ... 1.6
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