DSA00250233.pdf by Freescale Semiconductor

Partial File Text Freescale Semiconductor Technical Data MRFG35003M6T1 Rev. 2, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterize
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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