The recommended operating temperature range for the 4N25G is -40°C to 100°C, although it can withstand storage temperatures from -50°C to 150°C.
To ensure reliable operation, the 4N25G should be biased with a forward current of at least 5mA and a reverse voltage of up to 6V on the input diode. The output transistor should be biased with a collector current of up to 50mA and a collector-emitter voltage of up to 30V.
The 4N25G has a maximum allowable isolation voltage of 2500Vrms between the input and output, making it suitable for applications requiring high isolation voltage.
To prevent electrostatic discharge (ESD) damage, handle the 4N25G with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or tube. Avoid touching the pins or leads of the device.
The 4N25G has a limited bandwidth of around 10kHz, making it more suitable for low-frequency applications such as digital signal isolation or power supply isolation. For high-frequency applications, consider using a different optocoupler with a higher bandwidth.
