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NEU ENGLAND SEMICONDUCTOR SRE T>
bsbm^sb 000g05 7 143
INES
im pn to-b3
Case 807
lc(MAX) = 20 to 6OA Vceo(sus) = 40 to 300V
fi = 0.6 to 30 MHz
VCEO te Vce(sat) VBE VBE (sat) pd @ ts/b @ V
