DSA2IH00166030.pdf
by Not Available
- TIP110/111/112 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE =1000 @ V ce = 4V, I c =1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN
- Scan
- No
- No
- Obsolete
