DSA00598792.pdf by Renesas Technology

Partial File Text RQA0003DNS Silicon N-Channel MOS FET REJ03G0584-0200 Rev.2.00 Aug 03, 2006 Features · High Output Power, High Gain, High Efficiency Pout = +36 dBm, Linear Gain = 19 dB, PAE = 65% (f = 520 MHz) ·
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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