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DSAZIHA100060066.pdf
by American Microsemiconductor
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3GCRDX Thyristors Gate Turn Off Thyristor (GTO) V(DRM) Max. (V)150 V(RRM) Max. (V) I(T) Ra
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ted Maximum (A)3.0 @Temp. (øC) (Test Condition)25à I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(G
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