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    DSA00593071.pdf by Renesas Electronics

    • Preliminary Datasheet RJK03P0DPA MOS1 30 V, 20 A, 7.0 m max. MOS2 30 V, 25 A, 7.2 m max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching Features Low on-resistance Capa
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