DSA00588994.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf =
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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R07DS0465EJ0200 rjp30H RJP30h1 RJP30H1DPD Silicon N Channel IGBT High Speed Power Switching

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