DSA00587999.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RJL6014DPP Silicon N Channel MOS FET High Speed Power Switching Features Built-in fast recovery diode trr = 180 ns typ. (at IF = 15 A, VGS = 0, diF/dt = 100 A/s, Ta = 25 C
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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