DSA00587289.pdf by Renesas Electronics

Partial File Text Preliminary Datasheet RJP6065DPM Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25°C)
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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RJP606 RJP6065 RJP6065DP RJP6065DPM RJP6065DPM-00-T1

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