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    DSAZIHA100057632.pdf by American Microsemiconductor

    • PG1114 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)16 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)0.1u @
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