DSAH00673823.pdf by Toshiba
- JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV For wave detection 0.22±0.05 Unit: mm 1.2±0.05 0.32±0.05 3 0.13±0.05 1. ANODE 2. CATHODE 3. CATHODE/ANODE 0.8±0.05
- Original
- Unknown
- Unknown
- Unknown
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