DSAH00673823.pdf by Toshiba

Partial File Text JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV For wave detection 0.22±0.05 Unit: mm 1.2±0.05 0.32±0.05 3 0.13±0.05 1. ANODE 2. CATHODE 3. CATHODE/ANODE 0.8±0.05
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
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