DSA00449446.pdf by Infineon Technologies

Partial File Text Preliminary PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 860 960 MHz Description The PTF080101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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infineon smd PTF080101M smd transistor infineon TSSOP-10 TSSOP10