This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
CGH55015F2 / CGH55015P2
10 W, C-band, Unmatched, GaN HEMT
Cree's CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifically for high efficiency,