DSAEDA00068536.pdf by Eudyna Devices

Partial File Text FHX45X GaAs FET & HEMT Chips FEATURES â¢ â¢ â¢ â¢ Low Noise Figure: 0.55dB (Typ.)@f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg â¤ 0.15Âµm, Wg = 280Âµm Gold Gate Metallizatio
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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