DSAIH000132201.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE SEMICONDUCTOR MICROWAVE POWER G aAs FET TECHNICAL DATA FEATURES : H IG H PO W ER PidB = 39-5 dB m at 2.6 G H z H IG H G AIN G-|cib = 8-5 dB at 2.6 G H z TNM2600-7 H
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RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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