DSADIGA000154306.pdf by Infineon Technologies

Partial File Text IPP086N10N3 G IPB083N10N3 G OptiMOSâ¢3 Power-Transistor IPI086N10N3 G IPD082N10N3 G Product Summary Features VDS 8.2 mW ID â¢ Excellent gate charge x R DS(on) product (F
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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