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    DSAISS00031365.pdf by International Rectifier

    • IRFH5110PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 12.4 mΩ Qg (typical) 54 nC RG (typical) 1.5 Ω 63 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C) PQ
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