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    DSAISS00031237.pdf by International Rectifier

    • IRG7PH44K10DPbF IRG7PH44K10D-EPbF   Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V   G   G C IC = 40A, TC =100°C tSC 10µs, TJ(max)
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