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DSAISS00031143.pdf
by International Rectifier
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IRGP4263DPbF IRGP4263D-EPbF  Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V  G  G C IC = 60A, TC =100°C tSC ï³ï 5.5µs, TJ(max) = 175
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