DSA00207906.pdf by IXYS

Partial File Text Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 ± 25 m 2. Die Size Tolera
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851 36 RG 16 26 A114B dimensions as001 IXTD110N25T-8W IXTH110 ixth110n25t