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    DSAHI00077240.pdf by International Rectifier

    • IRFH8311PbF VDS Vgs max 30 ± 20 2.1 3.2 30 80 V V m nC A HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) = 25°C) i PQFN 5X6 mm Applicati
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