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DSAH00216404.pdf
by IXYS
Partial File Text
Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type TJM = 150°C V Low VCE(sat) VCES VCE(sat) V 2 3.4 2.4 2.3 2.6 2.2 2.2 2 2.2 3.9 3.4 3.9 3.6 3.3 3.5
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Unknown
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IXFD180N07-9X
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