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    DSAH00216404.pdf by IXYS

    • Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type TJM = 150°C V Low VCE(sat) VCES VCE(sat) V 2 3.4 2.4 2.3 2.6 2.2 2.2 2 2.2 3.9 3.4 3.9 3.6 3.3 3.5
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